5--1 semiconductor features ? 6a, 450v and 500v ?r ds(on) = 1.250 w ? soa is power dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedence ? majority carrier device ? related literature - tb334 guidelines for soldering surface mount components to pc boards description these are n-channel enhancement mode silicon gate power ?eld effect transistors speci?cally designed for appli- cations such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipo- lar switching transistors requiring high speed and low gate drive power. these types can be operated directly from inte- grated circuits. formerly developmental type ta17425. symbol packaging jedec to-204aa jedec to-220ab ordering information part number package brand rfm6n45 to-204aa rfm6n45 rfp6n45 to-204aa rfp6n45 RFP6N50 to-220ab RFP6N50 note: when ordering, include the entire part number. g d s drain (flange) source (pin 2) gate (pin 1) source drain gate drain (flange) september 1998 caution: these devices are sensitive to electrostatic discharge. users should follow proper esd handling procedures. copyright ? harris corporation 1998 file number 1494.2 rfm6n45, rfp6n45, RFP6N50 6a, 450v and 500v, 1.250 ohm, n-channel power mosfets [ /title (rfm6 n45, rfp6n4 5, rfp6n5 0) / subject (6a, 450v and 500v, 1.250 ohm, n- channel power mos- fets) / author () / key- words (harris semi- conduc- tor, n- channel power mos- fets, to- 204aa, to- 220ab) / creator () / docin
5-2 absolute maximum ratings t c = 25 o c, unless otherwise speci?ed rfm6n45 rfp6n45 RFP6N50 units drain to source voltage (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ds 450 450 500 v drain to gate voltage (rgs = 20kw) (note 1). . . . . . . . . . . . . . . . . . v dgr 450 450 500 v continuous drain current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d 666a pulsed drain current (note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i dm 15 15 15 a gate to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gs 20 20 20 v maximum power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p d 100 75 75 w linear derating factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 0.6 0.6 w/ o c operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . .t j , t stg -55 to 150 -55 to 150 -55 to 150 o c maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . t l package body for 10s, see techbrief 334 (for to-220) . . . . . . . . . . t pkg 300 260 300 260 300 260 o c o c caution: stresses above those listed in absolute maximum ratings may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?cation is not im plied. note: 1. t j = 25 o c to 125 o c. electrical speci?cations t c = 25 o c, unless otherwise speci?ed parameter symbol test conditions min typ max units drain to source breakdown voltage bv dss i d = 250 m a, v gs = 0v 450 - - v rfm6n45, rfp6n45 RFP6N50 500 - - v gate threshold voltage v gs(th) v gs = v ds , i d = 250 m a (figure 8) 2 - 4 v zero-gate voltage drain current i dss v ds = rated bv dss , v gs = 0v - - 1 m a v ds = 0.8 x rated bv dss , v gs = 0v, t c = 125 o c --25 m a gate to source leakage current i gss v gs = 20v, v ds = 0v - - 100 na drain to source on resistance(note 2 ) r ds(on) i d = 6a, v gs = 10v, (figures 6, 7) - - 1.250 w drain to source on-voltage (note 2) v ds(on) i d = 6a, v gs = 10v - - 7.50 v turn-on delay time t d(on) i d = 3a, v dd = 250v, r g =50 w, v gs = 10v, r l = 81 w (figures 10, 11, 12) -1545ns rise time t r -4080ns turn-off delay time t d(off) - 190 300 ns fall time t f - 60 100 ns input capacitance c iss v gs = 0v, v ds = 25v f = 1mhz, (figure 9) - - 1500 pf output capacitance c oss - - 250 pf reverse transfer capacitance c rss - - 200 pf thermal resistance junction to case r q jc rfm6n45 - - 1.25 o c/w rfp6n45, RFP6N50 1.67 o c/w source to drain diode speci?cations parameter symbol test conditions min typ max units source to drain diode voltage (note 2) v sd i sd = 3a - - 1.4 v diode reverse recovery time t rr i sd = 4a, di sd /dt = 100a/ m s - 800 - ns notes: 2. pulsed test: pulse width 300 m s duty cycle 2% 3. repetitive rating: pulse width limited by maximum junction temperature. rfm6n45, rfp6n45, RFP6N50
5-3 typical performance curves figure 1. normalized power dissipation vs case temperature figure 2. maximum continuous drain current vs case temperature figure 3. forward bias safe operating area figure 4. saturation characteristics figure 5. transfer characteristics figure 6. drain to source on resistance vs drain current 0 50 100 150 0 t c , case temperature ( o c) power dissipation multiplier 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a) 7 6 5 4 3 2 1 0 100 1000 10 1 v ds , drain to source voltage (v) 0.1 1 10 i d , drain current (a) operation in this area may be limited by r ds(on) dc operation 100w 75w t c =25 o c v dss (max) 450v rfm6n45, rfp6n45 v dss (max) 500v RFP6N50 0 6 8 101214 i d, drain current (a) v ds, drain to source voltage (v) 12 4 2 10 8 6 4 2 0 pulse duration = 80 m s v gs = 5v v gs = 4v v gs = 6v v gs = 7 v to 10v t c = 25 o c duty cycle 2% 25 o c v ds = 20v 80 m s pulse test duty cycle 2% i d(on) , drain to source current (a) 10 6 2 02 4 6 v gs , gate to source voltage (v) 14 0 125 o c -40 o c 02 8 1214 i d, drain current (a) 2.4 2.0 1.6 1.2 0.8 0.4 0 r ds(on) , drain to source on resistance ( w ) -40 o c 25 o c v gs = 10v pulse duration = 80 m s duty cycle 2% 46 10 125 o c rfm6n45, rfp6n45, RFP6N50
5-4 figure 7. normalized drain to source on resistance vs junction temperature figure 8. normalized gate threshold voltage vs junction temperature figure 9. capacitance vs drain to source voltage note: refer to harris applications notes an7254 and an7260 figure 10. normalized switching waveforms for constant gate current typical performance curves (continued) 1.5 2.5 0.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized drain to source 3.5 on resistance v gs = 10v i d = 6a 1.5 1.0 0.5 -50 0 50 100 150 t c , junction temperature ( o c) v gs = v ds i d = 250 m a normalized gate 0 threshold voltage 0 10203040 50 c, capacitance (pf) v ds, drain to source voltage (v) 1400 200 0 1000 600 c iss c oss c rss v gs = 0v, f = 1mhz c iss = c gs + c gd c rss = c gd c oss ? c ds + c gs 500 375 250 125 0 10 8 6 4 0 2 gate source voltage i g(ref) i g(act) 0.75 bv dss 0.50 bv dss 0.25 bv dss v dd = bv dss r l = 83 w i g(ref) = 1.1ma v gs = 10v v gs, gate to source voltage (v) 20 80 drain source voltage i g(ref) i g(act) v ds, drain to source voltage (v) v dd = bv dss t, time ( m s) test circuits and waveforms figure 11. switching time test circuit figure 12. resistive switching waveforms v gs r l r g dut + - v dd t on t d(on) t r 90% 10% v ds 90% 10% t f t d(off) t off 90% 50% 50% 10% pulse width v gs 0 0 rfm6n45, rfp6n45, RFP6N50
|
